| 摘要 |
A method of producing a semiconductor device comprises the steps of forming a gate insulating layer (3) on a semiconductor substrate (1) of one conductivity type; forming as aluminum gate electrode (4) on said gate insulating layer (3); forming impurity doped regions (5, 6) in said semiconductor substrate (1) by means of implantation of opposite conductivity type impurity ions into the semiconductor substrate (1) using said aluminum gate electrode (4) as a mask; and annealing said impurity doped regions (5, 6) by subjecting them to an irradiating beam which also impinges on the aluminum gate electrode (4). To reduce the possibility of damage to the electrode (4) resulting from the annealing process, at least the upper surface of the electrode (4) is covered with an insulating layer (7) before the annealing is carried out. |
