| 摘要 |
PURPOSE:To adjust the resistance value by means of simple heat treatment by a method wherein, in integrated circuit where passive elements such as resistor, capacitor, etc., FET and diode are formed on the same semiconductor GaAs substrate, a resistance layer is composed of a TaNxOy film. CONSTITUTION:An active layer 12 is selectively formed on the surface of a semiinsulating GaAs substrate 11 and then a gate electrode metal Al film 13 is evaporated on the overall surface of substrate 11. The film 13 is etched utilizing a photoresist 14 as a mask to form a gate electrode 15. Firstly an ohmic electrode metal is evaporated and lifted off to form an ohmic electrode 16 and then unnecessary Al film 13 is removed to form an FET. Secondly after forming an SiO2 insulating film 17 on the overall surface, a TaNxOy film 18 is formed on the film 17 by means of magnetron sputtering process. Thirdly the film 18 is ion-milled utilizing photo resist mask to form a resistance layer. Finally after making a through hole 19, in the film 17, a wiring layer 20 is formed. Through these procedures, the resistance value may be accurately adjusted by means of heat treating the TaNxOy film 18 subject to selection of proper temperature and time for heat treatment. |
