发明名称 |
Method of fabricating semiconductor device with MIM capacitor |
摘要 |
<p>Methods of fabricating a MIM capacitor and a dual damascene structure of a semiconductor device are disclosed. A disclosed method comprises forming a first conducting material as a lower interconnect on a semiconductor substrate; sequentially depositing second and third insulating layers over the first conducting layer; performing a first damascene process to form via holes and a trench within the second and the third insulating layers; filling the via holes and the trench to form a first contact plug connected to a lower interconnect and a second contact plug to contact the lower electrode of a MIM capacitor; forming the MIM capacitor over the second contact plug; sequentially depositing fourth and fifth insulating layers over the entire surface of the resulting structure; performing a second damascene process to form a via hole and a trench within the fourth and the fifth insulating layers; and filling the via hole and the trench to form a contact plug in contact with the upper electrode of the capacitor and another contact plug connected to the lower metal interconnect.</p> |
申请公布号 |
KR100572829(B1) |
申请公布日期 |
2006.04.24 |
申请号 |
KR20030102046 |
申请日期 |
2003.12.31 |
申请人 |
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发明人 |
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分类号 |
H01L27/108;H01L21/02;H01L21/768;H01L21/8242;H01L23/522 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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