| 摘要 |
PURPOSE:To obtain a thin film vapor depositing apparatus in which a desired thin film is uniformly formed on a substrate having differences in level and the side of a vessel by providing a beam source for vapor deposition used for the thin film formation and an ion beam source for sputtering which irradiates ion beam on a prescribed position of the substrate at the time of the thin film formation or alternately in a vacuum vessel. CONSTITUTION:The shower beam-like ICB3 injecting from a cluster ion beam (ICB) source 2 and the FIB7 generated from a focusing ion beam (FIB) source 6 are simultaneously irradiated on a base plate 4 in the inside of a vacuum vessel 1 which is maintained in high vacuum of 1X10<-5>Torr. At this time, the substrate is scanned by deviating and controlling 63 precisely the position of the FIB7. For example, while vapor depositing A on the plate 4 having differences in level shown in the figure by means of ICB3, when the FIB7 of Ar<+> is selectively scanned and irradiated toward the valleys of the difference in level, one part of vapor depositing A is sputtered in the valleys to generate sputtering grains 8 and these can be sputtered and vapor deposited on the side wherein the ICB3 is hardly vapor-deposited. |
