摘要 |
A method and system (1 ) for forming a variable thickness seed layer (102, 116) on a substrate (25, 100, 110) for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate (25, 100, 110) in a process chamber (10) containing a showerhead (30), with the center (106, 122) of the substrate (25, 100, 110) generally aligned with an inner gas delivery zone (32) of the showerhead (30) and the edge (104, 120) of the substrate (25, 100, 110) generally aligned with an outer gas delivery zone (34) of the showerhead (30). The method further includes depositing a seed layer (102, 116) on the substrate (25, 100, 110) by exposing the substrate (25, 100, 110) to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone (32), and exposing the substrate (25, 100, 110) to a second gas flowed through the outer gas delivery zone (34), whereby the seed layer (102, 116) is deposited with a thickness at the edge (104, 120) of the substrate (25, 100, 110) that is less than the thickness at the center (106, 122) of the substrate (25, 100, 110). |