| 摘要 |
PURPOSE:To prevent the occurrence of discontinuous lines in growing of a cover film, to improve moisture resistance and to prevent the occurrence of cracks, when the cover film is formed on a wiring, which is formed on an insulating film of a semiconductor substrate, by forming a liquid phase oxide film by a spin coating method, and burying the difference in steps of wiring edges. CONSTITUTION:An insulating film 12 is formed on a semiconductor substrate 11 by an ordinary technology. On the insulating film, e.g., an aluminum wiring 3 is formed. In the present invention, a cover film is not directly formed, but a liquid phase oxide film 14 is formed. The liquid phase oxide film is formed by, e.g., the following way: hydrochloric acid is added to methyl silicate: alcohol is added to said mixture as a solvent; the mixture is applied on the substrate by a spin coating method; then baking is performed at 450 deg.C; the solvent is removed; the methyl is removed by a chlorine group; and silicon dioxide is hardened. Then, e.g., PSG is grown and a cover film 15 is formed. Since the film 15 is grown on the gentle surface, the occurrence of discontinuous lines is suppressed. |
