SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME

摘要

A semiconductor device and its manufacturing method are provided to minimize a junction leakage current by restraining an isolation region from being recessed using a field protection layer capable of protecting an edge portion of the isolation region. A trench(110) is formed on a semiconductor substrate(100). A first oxide layer(111) is formed along an inner surface of the trench except for an edge portion of the trench. A nitride liner(113) is formed on the first oxide layer. A second oxide layer(140) is prolonged from the first oxide layer to cover the edge portion of the trench. The thickness of the second oxide layer is smaller than that of the first oxide layer. A field oxide layer(120) for filling the trench is formed thereon. First and second field protection layers(131,133) are selectively formed on the resultant structure.