| 摘要 |
PURPOSE:To prevent holes from being injected from a base to an emittere by a method wherein the emitter is composed of a semiconductor having an energy band gap larer than that of the semiconductor that forms the base. CONSTITUTION:The base of the titled device has sub-bands E1-En corresponding to minority carriers. When an emitter conductor EC meets the sub-bands E1-En of the base by base-emitter bias, electrons pass through an emitter potential barrier PB E and a collector potential barrier PBC by resonance tunneling. Here, the energy band gap of the emitter semiconductor is made larger than that of the base semiconductor, thereby the injection of holes from the base to the emitter can be prevented. |
