发明名称 |
IMPROVED THIN FILM FIELD EFFECT TRANSISTOR COMPATIBLE WITH INTEGRATED CIRCUIT AND METHOD OF PRODUCING SAME |
摘要 |
There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage. |
申请公布号 |
JPS60254661(A) |
申请公布日期 |
1985.12.16 |
申请号 |
JP19850102533 |
申请日期 |
1985.05.14 |
申请人 |
ENERGY CONVERSION DEVICES INC |
发明人 |
SUTANFUOODO AARU OBUSHINSUKII;SUTEIIBUN JIEI HADOJIENSU |
分类号 |
H01L21/324;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/161;H01L29/40;H01L29/78;H01L29/786;H01L29/861 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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