| 摘要 |
PURPOSE:To reduce the occupation area and thickness of a single magnetic flux quantum memory cell while securing the sectional area of an insulating film sufficiently by forming the insulating film which forms an inductance bridge covering the upper part of Josephson junction. CONSTITUTION:Josephson junction parts 23 and 24 of counter electrodes 28 and 29, and 27, and a base electrode 22 form an induction bridge across an insulating film 25, and the counter electrodes 28 and 29, and 31 form an inductance bridge across an insulating film 30. The equivalent circuit of the single magnetic flux quantum memory cell in this structure is exactly the same as before because the counter electrodes 28, 29 and 31 conduct. Consequently, even when the sectional area of the insulating film is small, a sufficient inductance value is seured by increasing the sectional area of the insulating film 30. |
