| 摘要 |
PURPOSE:To improve the multiplication factor by a method wherein the p-n junction at an avalanche multiplication part and the p-n junction at a guard ring part are joined to each othr along a gentle slope. CONSTITUTION:The interface JS between a multiplication part 3 the semiconductor layer constituting the avalanche multiplication part and a guard ring semiconductor layer 4 the semiconductor layer constituting the guard ring part makes a slope which decreases toward the guard ring part with respect to the p-n junction plane. The local concentration of electric field does not generate in the p-n junction present at the interface JS thus making a slope, therefore, local yield does not generate. Besides, a gentle slope is more effective. |
