| 摘要 |
PURPOSE:To contrive the reduction of chip size by a method wherein an oxide film which determines the capacitance between a control gate and a floating gate is formed on a semiconductor substrate. CONSTITUTION:A source region 10, a drain region 7 and an n type impurity region 9 as the control gate CG are formed on the p type semiconductor substrate 1. A floating gate 4 is C-shaped and is formed on the channel region between the regions 10 and 7 via a gate oxide film 12, and the other part of the gate 4 is formed on the regions 7 and 9 via ultrathin oxide films 5 and 6. An oxide film 16, an aluminum wiring 17, and a protection film 18 are formed on the gate 4. Then, capacitors C1 and C2 are formed between the gate 4 and the region 7 and between the gate 4 and the region 9, and information is written and erased by injecting and releasing electrons through the film 6 to the gate 4 by impressing electric fields on the region 9 and the gate CG. |
