发明名称 Alkylsulfonyloximes for high resolution i-line photoresists of high sensitivity
摘要 <p>The invention describes the use of oxime alkyl sulfonate compounds of formula (1), wherein R is naphthyl, (2) or (3); R0 is either an R1-X group or R2; X is a direct bond, an oxygen atom or a sulfur atom; R1 is hydrogen, C1-C4alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chloro, bromo, C1-C4alkyl and C1-C4-alkyloxy; R2 is hydrogen or C1-C4alkyl; and R3 is straight-chain or branched C1-C12alkyl which is unsubstituted or substituted by one or more than one halogen atom; as photosentisitve acid generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range.</p>
申请公布号 KR100686473(B1) 申请公布日期 2007.02.26
申请号 KR19997001646 申请日期 1999.02.27
申请人 发明人
分类号 G03F7/004;C07C309/65;C07C309/66;C07D333/22;C07D333/24;G02B5/20;G03F7/00;G03F7/038;G03F7/039;G03H1/02;H01L21/027 主分类号 G03F7/004
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