| 摘要 |
PURPOSE:To produce the titled device with good reproducibility by a method wherein a p<-> type layer is formed in the surface layer by implantation B ions to a semi-insulation GaAsLEC substrate and heat-treating it. CONSTITUTION:Using the semi-insulation GaAsLEC substrate 7, a B-injected region 8 is formed by B ion implantation. Next, when annealing is carried out with a CVD Si3N4 film 9 as the protection film, a p<-> type layer 10 is formed in part of the region 9. After removal of the film 9, an n type active layer 3 is epitaxially grown, and next a source electrode 4, drain electrode 5 and gate electrode 6 are successively formed, thus producing a MESFET. In such a manner, a p<-> type layer is easily formed with good reproducibility, and an n type active layer is epitaxially grown thereon, thereby, the GaAsMESFET having a p<-> type active layer can be produced. Furthermore, variation of the condition for B ion implantation enables the changes in thickness and hole concentration of the p<-> layer. |
