| 摘要 |
PURPOSE:To improve transfer efficiency, by forming the first transistor, which is constituted by the first and second charge storage regions, and the second transistor, which is constituted by the second and third charge storage regions as electrostatic induction transistors SIT having ideal saturation characteristics. CONSTITUTION:A series resistor between an n<+> region 203 and a region 209, wherein a potential barrier PP1 is located, is made to be RSP1. A series resistor between the region 209 and a p<+> region 206 is made to be RPG1. A series resistor between the n<+> region 203 and the p<+> region 206 is made to be RGS1. Then an expression RGS1>RPG1+RSP1 is obtained. A series resistor between an n<+> region 204 and a region 10, wherein a potential barrier PP2 is located, is made to be RSP2. A seried resistor between the region 210 and a p<+> region 207 is made to be RPG2. A series resistor between the n<+> region 204 and the p<+> region 207 is made to be RGS2. Then an expression upon the above data, layout, sizes and impurity distribution are determined. |
