| 摘要 |
PURPOSE:To improve transfer efficiency to a large extent without depending on the amount of signal charge, by making the charge, whose polarity is reverse with respect to the signal charge, to be inner bias charge, and providing a storage region having the same conducting type as that of a storage region provided as the signal charge for the inner bias charge. CONSTITUTION:An n<+> region 23 is formed in a (p) well 202, which is formed in an (n) substrate 201. The capacity of the charge storage part of the n<+> region 203 is made to be CS. The capacity of the charge storage part of an n<+> region 204 is made to be CB. The capacity of the charge storage part of an n<+> region 205 is made to be CD. Then, as a general condition for using CPD, CS>CB>CD holds true. Meanwhile, the capacity of the charge storage part of a p<+> region 208, which is formed on the (n) substrate 201 is made to be CB'. The capacity of the charge storage part of a p<+> region 209 is made to be CE. The junction capacity of an n<+> region 211 is made to be CC. Electrodes TG1, TC, TG2, TG1' and TC' are formed on an insulating material 212. The n<+> region 203 and the n<+> region 211 are electrically connected by using a transmission line 213. |
