| 摘要 |
PURPOSE:To eliminate surface irregularity after the formation of a pattern and to prevent the breakdown of wire when an aluminum pattern is formed, by manufacturing a semiconductor in consideration of the fact that the thickness of an oxide film becomes twice when polysilicon is oxidized. CONSTITUTION:Poly Si 13 [its thickness is (t)] is formed on the entire surface of a substrate 11. The poly Si 13, which is not coated by resist 14, is etched by about 1/3 the entire thickness. Doping is not performed at a part, which requires the pattern of the poly Si 13. Only the other part is doped. Thus difference in impurity concentration is provided. When the poly Si is oxidized, the thickness of the oxide film becomes twice. The thickness of an oxide film 15 at a part, where the poly Si with a thickness of 2/3t is oxidized, becomes 4/3t. Thus the surface is flattened. Then patterning of an Al wiring 17 is performed. In this way, the breakdown of the wire can be perfectly prevented. |
