| 摘要 |
PURPOSE:To fabricate highly reliable chip bonding and wire bonding at a low cost, by providing an Au-Ag alloy film on at least inner lead parts and a die pad part in a lead frame. CONSTITUTION:An Au-Ag alloy film 8 is coated on inner lead parts 3 and a die pad part 2 of a lead frame of 42wt% Ni-Fe alloy. The film is formed by a wet plating method or an evaporating method. By using this lead frame, an Si chip is bonded under the eutectic conditions and Au wire bonding is performed. Then, the bonding property of the Si chip (ohmic contact property and mechanical bonding strength), which is equivalent to that of the lead frame having a conventional Au film, and the Au wire bonding property can be obtained. |
