| 摘要 |
<p>PURPOSE:To obtain a solid-state memory in simple structure which holds storage contents even when powered down and allows recording and reproduction by constituting a storage element by using a thin-film ion conductor and forming electrodes for information writing or reading on both surfaces of the ion conductor thin film. CONSTITUTION:Groups X0, X1, X2-Xn of striped electrode lines 2 and groups Y0, Y1, Y2-Yn of striped electrode lines 3 are adhered to both surfaces of the ion conductor thin film 1 at right angles to each other. The electrode lines 2 and 3 are made of the same material and contain proper conduction ions combined with the ion conductor. When voltages + or -V0 are applied to optional electrode lines Xm and Yn from a power source for driving, the conduction of ions is induced at their intersection. Here, some threshold voltage is necessary for the conduction of ions, so information is written by selecting the V0 so that 2V0> Vth>V0.</p> |
