| 摘要 |
PURPOSE:To improve yield of single crystallization of polysilicon island by optimizing film thickness of polysilicon cap layer in the method for single-crystallizing the polysilicon island on an insulated layer with the indirectly heating type laser heating method. CONSTITUTION:In the method for single-crystallizing noncrystal silicon island 14 which is provided on an insulated layer and is covered with a separation cap layers 15, 16 having thermal conduction coefficient which is lower than that of silicon and an energy beam absorbing cap layer 17, the yield of single-crystallization can be enhanced by setting thickness of the energy beam absorbing cap layer 17 thinner than that of island 14. Namely, the yield was 100% in case thickness of polysilicon island 14 was 4,000Angstrom and thickness of cap layer 17 was 2,300Angstrom . |
