| 摘要 |
PURPOSE:To reduce the variation in the potential of an area opposite a substrate and to reduce shading by superposing a transfer gate pulse upon a transfer pulse applied to a transfer electrode of the 2nd layer. CONSTITUTION:A charge transfer electrode has double-layer electrode structure composed of electrodes 39b and 40b of the 1st layer shown by an alternate long and short dash line and electrodes 39a and 40a of the 2nd layer shown by a broken line. Major parts of the electrodes 39a and 40a are formed on the electrodes 39b and 40b and a transfer gate area 41 and part of vertical registers RM and RN couple with a P well across capacitance. Buried channels right under electrodes are in a depletion state, so the capacity between the electrodes 39a and 40a, and a P well corresponds to the area of the gate area 41 apparently. Consequently, P well variation in a period wherein transfer gate pulses are superposed is small and shading is reduced to an extent where there is no problem.
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