| 摘要 |
PURPOSE:To make it possible to perform high speed operation, by using conductivity modulation of minority carriers, which are injected from the third electrode, and controlling the amount of hot injection of majority carriers by a heterojunction structure. CONSTITUTION:A contact metal 8 is formed on a p<+>-GaAs region (third electrode) 6. The (x) value of an n-AlxGa1-xAs layer 3 on the cathode side is selected to be, e.g., 0.3eV, so that a barrier, which is smaller than energy (0.36eV) between points GAMMA-L of GaAs, is formed. When the (x) value, which is smaller than energy between the point GAMMA and the point L of an upper valley, is selected, majority carriers can be injected at a hot state. The injected carriers flow to an anode electrode with a high speed being kept without transition to the upper valley. In order to control this current, minority carriers (holes) 5 are injected from a p<+> layer 6, which is the third electrode, the holes are made to flow to a heterogeneous interface and the conductivity modulation is utilized. |
