| 摘要 |
PURPOSE:To form reproducibly grooves with precise depth and shape on a semiconductor surface, by forming a single crystal semiconductor layer over the surface of the semiconductor substrate, and then by removing the insulating film pattern. CONSTITUTION:After a silicon dioxide film is formed over a silicon substrate 1, it is patterned to form a plural of mask patterns 6 at redetermined intervals. A single crystal silicon layer 7 is formed over the exposed surface of the silicon substrate 1. The mask patterns 6 are removed to form grooves which are defined by the silicon substrate 1 and the single crystal silicon layer 7. A silicon dioxide film 8 with a thickness sufficient to bury the separation grooves 3 resulting from thermal oxidation is grown inside the grooves 3 and over the surface of the single crystal silicon layer 7. The silicon dioxide film 8 over the single crystal silicon layer 7 is selectively removed so that element isolation regions 5 consisting of the grooves 3 in which the silicon dioxide film 8 is being buried can be completed. |
