| 摘要 |
PURPOSE:To form a thin film with a small interfacial level density over a compound semiconductor substrate, by a method in which, after the compound semiconductor substrate is treated by heating at a temperature of 200-450 deg.C in hydrogen plasma, a thin film is formed over the semiconductor substrate surface. CONSTITUTION:An N type GaAs substrate 2 being a sample is put in the plasma apparatus 1. After vacuum-evacuated, the plasma apparatus 1 is supplied with H2 gas to produce H2 plasma by applying high frequency electric power while heating the substrate 2 at a temperature of 200-450 deg.C by a heater 3. After the substrate 2 is left at this state for a predetermined time, SiH4 and NH3 gas is introduced to deposite an Si3N4 film over the substrate 2. By forming the Si3H4 film in this way, the interfacial level density can be decreased. |
