| 摘要 |
PURPOSE:To prevent contamination on an etching surface and damage of a substrate to be treated due to ion-bombardment, by irradiating light onto the surface of the substrate to be treated and at the same time by supersonic-vibrating the substrate. CONSTITUTION:Chlorine atmosphere is kept in a chamber 11. Ultraviolet rays UV are projected on a substrate 15 to be treated through an ultraviolet ray transmitting window 12 from a mercury-arc lamp etc. to react the surface of a silicon layer with reacting gas. In this case, the substrate 15 is supersonic-vibrated by a supersonic vibrator 20 which is engaged with stage 16 to scatter reaction product from the surface being etched, so that the silicon surface can be always exposed to the etching area. In this way, the etching rate can be increased considerably. |
