| 摘要 |
PURPOSE:To shorten the writing cycle by using memory cells that can work at higher speeds than those cells forming a data bit cell array to form a check bit cell array. CONSTITUTION:The memory cells forming a check bit cell array 3 are made to have a higher working speed than those cells forming a data bit cell array 1. A memory control circuit 6 is used exclusive for the array 1; while a memory control circuit 11 is used for the array 3. When the transistor capacitor type dynamic memory cells which can work at a high speed are used to the array 1, the 4-transistor type dynamic cells are available. |
