| 摘要 |
PURPOSE:To form a microscopic through hole by a method wherein an insulating film, on which an etching method generating no side etching such as reactive ion etching can be applied, is provided on the through hole part in advance. CONSTITUTION:An insulating film 6 whereon a microscopic etching such as SiN can be performed is formed on the first layer of an Al layer 3 formed on the SiO2 film 2 of an Si substrate 1, and the part which is turned to a through hole is coated by a photoresist 12. After a dry etching is performed on the insulating film 6 using the gas such as CF4, for example, using said photoresist 12 as a mask, the photoresist 12 is removed, an Al2O3 layer 4 is formed on the whole surface, a through hole part 20 is removed, and the other part is coated by a photoresist 10. Then, a wet etching is performed on the Al2O3 layer 4. At that time, the Al2O3 layer 4 is side-etched, but as the insulating film 6 is provided in advance, the unnecessary part of the first layer of Al layer 3 is not exposed. |
