| 摘要 |
PURPOSE:To execute at a high speed and completely a bit line short circuit of a RAM constituted of an MIS transistor, and to shorten an access time by providing a short circuit which connects in parallel a P channel MIS transistor and an N channel MIS transistor between a pair of bit lines, so that both the transistors are made to conduct temporarily, when selection and non-selection of a word line is switched. CONSTITUTION:A short circuit SH is constituted by connecting in parallel an N channel MIS transistor QN and a P channel MIS transistor QP between bit lines BL, BL'. A clock phi which becomes H when a word line WL is switched, and a clock phi' of the opposite phase which becomes L at that time are impressed to the gate of the transistor QN and the gate of the transistor QP, respectively. When the clock phi rises to H, the transistor QN turns on, and simultaneously, when the clock phi' falls to L, the transistor QP turns on. As a result, a charge movement occurs between the bit lines BL, BL', and soon they become a perfect short and equal potential state.
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