| 摘要 |
PURPOSE:To reduce the dispersion of ON voltage among semiconductor elements largely, and to increase even controllable currents by forming the longitudinal direction of a channel in parallel with or in approximately parallel with the <100> direction on a 100 face. CONSTITUTION:The longitudinal directions of channels CHs are shaped in parallel with or in approximately parallel with the <100> direction on a 100 face. In an experiment using a GTO element with channels such as five mutually parallel ones, the dispersion of ON voltage among the elements is reduced to approximately one third as compared with the dispersion by a conventional technique.
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