| 摘要 |
PURPOSE:To check a resist to be exposed unnecessarily to plasma, and to contrive to enhance reliability and yield of a semiconductor device by a method wherein a mechanism to enable to regulate the exposing area of the surface of a sample to plasma is provided. CONSTITUTION:A thin plate 10 formed with a slit 11 is provided in close vicinity to the etching surface of a sample facing to the sample 1 to be etched set up in a reaction chamber provided with electrodes 2, 3. The thin plate 10 is driven in parallel with the surface of the sample 1 according to a motor 12, etc. Namely, the thin plate 10 masks the etching surface of the sample 1 from a plasma atmosphere excluding the slit 11 part, and reduces the area to be exposed to plasma. The thin plate 10 is transferred along the sample surface, while the transferring speed thereof is regulated according to the shape of the slit 11 and the etching characteristic. Moreover, masking can be performed by driving intermitently the thin plate making chip width as a unit instead of to be transferred continuously, and by exposing the sample 1 to plasma only during the period facing to the slit 11. In the period masked by the thin plate 10, a resist is not exposed to plasma, and can be protected from etching. |
