| 摘要 |
PURPOSE:To form planar structure proper to integration by using a wafer in which semiconductor layers as a collector, a base and an emitter are grown in an epitaxial manner in succession so that at least one of an emitter junction or a collector junction is shaped in a hetero-junction. CONSTITUTION:An n<+> type GaAs layer 22 and an n type GaAs layer 23 as collector layers, a p type GaAs layer 24 as a base layer, an n type AlGaAs layer 25 as an emitter layer and an n<+> type GaAs layer 26 as a cap layer for easily taking the ohmic contact of an emitter are grown to a semi-insulating GaAs substrate 21 through a MBE method in succession. Insulating films 27 for isolating elements are buried into grooves. Ions are implanted, and p<+> type external base layers 28 are formed through flush annealing. An insulating film 29 is buried similarly, and an insulating film 30 is shaped. AuGe/Au is buried into the hole of the insulating film 29 to form a collector electrode 31. A contact hole is bored to an emitter region and an emitter electrode 32 consisting of AuGe/Au is shaped, and contact holes are bored to external base regions and base electrodes 33 composed of Au/AuZn are formed.
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