| 摘要 |
PURPOSE:To enable to check a fall of yield of a semiconductor element without generating adhesion of silicon waste to the surface of a semiconductor substrate by a method wherein after the semiconductor substrate is put in an airtight capsule, the capsule is set up in a reaction tube. CONSTITUTION:To grow crystals on the surfaces of semiconductor substrates 11a, 11b,..., after the inside of a reaction tube 25 is exhausted to a vacuum, reactive gas is introduced in an airtight capsule 21 from a gas send-in pipe 30, and the reactive gas thereof is exhausted steadily from an exhaust vent 23 and an exhaust pipe 28 in the condition holding always the insides of the airtight capsule 21 and the reaction tube 25 to the prescribed pressure. The inside of the reaction tube 25 is heated to a high temperature according to a heater 16 to grow crystals on the surfaces of the semiconductor substrates 11a, 11b,.... At this case, because a substrate diffusion jig 12 is set up in the airtight capsule 21 at first, and then set up in the reaction tube 25, the semiconductor substrates 11a, 11b,... finished with washing are protected sufficiently by the airtight capsule 21, and to make the diffusion jig 12 or the semiconductor substrates 11a, 11b,... to come in contact with the reaction tube 25 is not generated even when crystal growth is to be performed for several times repeatedly.
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