| 摘要 |
PURPOSE:To form a pattern by using a negative type deep uv resist for a first photosensitive layer and self-aligning an ion implantation region to an ion implantation region through deep uv exposure employing a pattern as a mask. CONSTITUTION:An SiO2 film 2 is formed onto a semiconductor substrate 1, a negative type deep uv resist 3 is shaped, an optical absorption material 4 is formed, and a positive type photo-resist 5 is shaped. A pattern in which an undercut is generated is obtained in one part of the layer 4 through pattern exposure and development. As is implanted to a region 6. The whole surface is irradiated by deep uv beams, and the deep uv resist 3 is photosensitized and developed. The positive type photo-resist pattern 5 and the layer 4 are removed, and a pattern in which a section not exposed is bored is acquired. Boron ions are implanted, and a boron-ion implanting region 7 self-aligned with an As-ion implanting region is formed. |
