| 摘要 |
PURPOSE:To prevent electrostatic breakdown without affecting normal circuit operation by connecting an emitter and a collector in a transistor element as a protective element between a base and a collector in a transistor element. CONSTITUTION:An N-P-N type transistor element 2 used as a transistor such as an input one for a differential amplification circuit is formed. A base and a collector in the element 2 are each connected to external lead terminals 4 through pads 3. An N-P-N type transistor element 5 as a protective element is shaped in an island region electrically isolated from an island region in which the transistor element 2 is formed. An emitter region in the element 5 is connected to a base region in the element 2 while a collector region in the element 5 is connected to a collector region in the element 2. An emitter and a collector in the protective element 5 are connected in parallel between the base and the collector in the element 2. When surge voltage is applied to the external terminals, the element 2 and the protective element 5 each share surge voltage, and the transistor element 2, 5 mutually absorb surge voltage. |
