| 摘要 |
PURPOSE:To enable to perform more uniformly vapor growth at low temperature heating to respective semiconductor substrates of a large number of sheets by a method wherein the semiconductor substrates of the plural number of sheets are arranged to be held in parallel mutually in the condition facing the plane surfaces thereof mutually, and moreover, in parallel with the direction of current of reactive gas according to a holding tool, heated according to a heating source, and reactive gas is flowed along the semiconductor substrates. CONSTITUTION:When vapor growth films are to be formed on wafers 16,..., infrared lamps 18 are heated to heat the whole of the wafers 16,.... Reactive gas is supplied from nozzles 13, and ultraviolet rays radiated from ultraviolet lamps 19 are supplied thereto. Accordingly, reactive gas is excited by absorbing ultraviolet energy, decomposition and a chemical reaction are generated, and deposited as films on the surfaces of the wafers 16,... absorbing heat energy. Because the wafers 16,... of the plural number of sheets are in parallel with the standing up condition, and moreover in parallel with a current of reactive gas at film forming time thereof, reactive gas can be supplied uniformly to the respective wafers 16,... even when the wafers 16,... are treated by a large quantity, and no dispersion is generated to film thickness to be formed on the wafers 16,.... |
