| 摘要 |
PURPOSE:To reduce traps of electrons and positive holes due to defects of the structure of an Se photosensitive film and to simultaneously lower residual potential at the time of positive or negative charging by incorporating a minute amt. of Fe. CONSTITUTION:Se is doped with a minute amt. of Fe by melting a mixture of an Fe source, such as a simple substance of Fe, Fe selenide or other Fe compds., and Se in a tightly closed vessel and homogenizing them, or melting Se in the vapor of a volatile Fe compd. Said photosensitive film of Fe-doped Se is formed on a substrate by the vapor deposition, sputtering, ion plating, etc. using said Fe.Se source. In the photosensitive film thus obtained, dangling bonds in an amorphous Se are compensated by the addition of Fe, and density of structural defects themselves is lowered. As a result, the number of the traps of electrons or positive holes can be decreased and the absolute value of residual potential both in the case of positively or negatively charging can be lowered at the same time. |
