| 摘要 |
PURPOSE:To realize characteristics desirable to both a first one conductive type semiconductor region and a second one conductive type semiconductor region by isolating the first region and the second region having impurity concentration higher than that of the first region by an other conductive type semiconductor region and forming an IIL element in the second region and an analog element in the first region. CONSTITUTION:An N<+> type region 14 and impurity layers 15B, 15C having concentration higher than that of the region 14 are shaped, and an N type layer 16 is grown on the whole surface. P type regions 18A, 18B are formed so as to surround N<+> type regions 17A, 17B by thermally treating a substrate 11. Consequently, the N type layer 16 is isolated into two regions 16A, 16B. A P type impurity is diffused to each shape P type regions 19A, 19B and 19C in the N<+> type region 17A and the N type region 16B. An N type impurity is diffused to severally form N<+> type region 20A, 20B and 20D in the P type regions 19B and 19C, and N<+> tyep regions 20C and 20E are shaped in the N<+> type region 17A and the N type region 16B. An I<2>L element is formed in one N<+> type region 17A isolated by the P type region 18A, and an N-P-N Tr as an analog element is shaped in the other N type region 16B. |
