| 摘要 |
PURPOSE:To decrease the number of elements and to improve the degree of integrated circuit by employing tunnel junction which has plural negative resistance regions of a current-voltage characteristic for one of elements of a memory cell. CONSTITUTION:The memory cell consists of the tunnel junction 1, negative resistance 2, and a switching element 2. The current-voltage characteristics of the junction 1 is shown by a curve X'OX and the junction 1 is applied with a constant voltage V0 through a resistance 2. The part of a curve OX except a region indicating negative resistance is sectioned into regions R1-R4. The junction 1 has its operation point at one of intersections A1-A4 of those four regions and a curve YZ. Information is stored corresponding to those intersections. In such a case, two-bit information is stored because of the four intersections. |
