发明名称 MAGNETORESISTANCE EFFECT TYPE ELEMENT
摘要 PURPOSE:To obtain a magnetoresistance effect type element, electromagnetic characteristics thereof hardly change by stress, by laminating a plurality of metallic magnetoresistance effect films having different symbols of magnetostriction in succession and changing the films into multilayers. CONSTITUTION:An Ni-Fe film having positive magnetostriction and an Ni-Fe film having negative magnetostriction are evaporated continuously onto a glass substrate. Since the change of magnetostriction becomes insensitive to the compositions of the films by a compensation effect by the interaction of the films having different magnetostriction in a synthetic film, the magnetostriction of the synthetic film is not determined by the simple addition and subtraction of the absolute values of the magnetostriction of several film, and films having the difference of magnetostriction larger than that of the films must be used. The magnetostriction of the synthetic film can be adjusted properly by bringing magnetic films having different symbols of magnetostriction to a composite state. The variation of the value of magnetostriction is reduced to the variation of the composition of the films by forming the synthetic film. The same applies to amorphous metallic thin-films consisting of Co-Nb, Co-Zr, Co-W, etc. besides Ni-Fe and Ni-Co alloys.
申请公布号 JPS60251682(A) 申请公布日期 1985.12.12
申请号 JP19840107585 申请日期 1984.05.29
申请人 HITACHI SEISAKUSHO KK 发明人 KITADA MASAHIRO;TANABE HIDEO;SHIMIZU NOBORU;TSUCHIYA HIROSHI;KATSUMATA MASAO
分类号 G01R33/09;G01R33/06;G11B5/39;H01L41/12;H01L43/08;H01L43/10 主分类号 G01R33/09
代理机构 代理人
主权项
地址