| 摘要 |
PURPOSE:To obtain a thin-film transistor, through which high mobility is acquired and which has self-alignment properties, by forming structure in which source-drain regions are shaped by a semiconductor layer, to which a high concentration impurity is added, and an intrinsic polycrystalline semiconductor layer, to which an impurity is not added, a gate insulating film layer and a gate electrode layer are laminated onto said regions in succession. CONSTITUTION:A semiconductor thin-film to which phosphorus as a high concentration impurity is added is used as a source region 5 and a drain region 6. The semiconductor thin-film containing phosphorus as the high concentration impurity may be deposited directly through a decompression CVD method by a gas in which phosphine and silane are mixed, but is can also be formed by implanting phosphorus ions to an intrinsic polycrystalline silicon thin-film. An intrinsic polycrystalline silicon film 4' is laminated and patterned, a gate insulating film 3 and a gate electrode 2 are laminated, a contact hole 9 is bored, and a source electrode terminal 7 and a drain electrode terminal 8 are shaped, thus completing a thin-film transistor. |
