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发明名称
SILICON WAFER AND PROCESS FOR CONTROLLING DENUDED ZONE DEPTH IN AN IDEAL OXYGEN PRECIPITATING SILICON WAFER
摘要
申请公布号
EP1493179(B1)
申请公布日期
2007.12.12
申请号
EP20020773835
申请日期
2002.10.21
申请人
MEMC ELECTRONIC MATERIALS, INC.
发明人
LIBBERT, J. L.;BINNS, M. J.;FALSTER, R. J.
分类号
H01L21/322
主分类号
H01L21/322
代理机构
代理人
主权项
地址
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