HIGH DENSITY SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR PRODUCING THE SAME

摘要

A charge-pump-memory device is disclosed which comprises an insulating substrate (11) on which are arranged: an n<+> semiconductor region (12) which constitutes a bit line; another n<+> semiconductor region (14) which constitutes a power supply line; and a p-type semiconductor region (13) between the two n<+> semiconductor regions which is a floating base region; a metal wiring layer (16) constituting a word line is situated on an insulating layer (15) over the semiconductor regions, the floating base region being separated from the wiring layer by only a thin portion of the insulating layer. The bit line runs parallel with the power supply line and perpendicular to the metal wiring constituting the word line.