| 摘要 |
PURPOSE:To etch uniformly a material to be etched in a reactive ion beam etching apparatus provided with a reactive ion generating part and an ion leading- out electrode by curving the electrode so as to distribute uniformly reactive ion beams. CONSTITUTION:A reactive ion beam etching apparatus is composed essentially of a reactive ion generating part 1 and an ion leading-out electrode 5a having projected curvature at the central part on the side farther from the part 1 and placed opposite to the outlet of the part 1. In the generating part 1, introduced reactive gas 2 is converted into reactive ions 4 in the state of plasma. The electrode 5a is kept at necessary potential, leads out the reactive ions 4, and passes them as reactive ion beams 8.
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