| 摘要 |
<p>1. A thyristor which may be blocked through the gate (14), realized on a semiconductor chip which is formed a base substrate of the N type having a low doping rate, the chip mainly comprising regions of alternating conductivity types and superficial metallizations for the anode (10), the cathode (12) and the gate (14), characterized in that the anode metallization (10) and the gate metallization (14) are situated on a first chip surface and the cathode metallization (12) is situated on a second chip surface, and that the alternating regions are as follows : N regions of a low doping rate of the base substrate constituting a first central layer (N1) ; N+ regions of a high doping rate constituting a gate region (N3) on one side of the first central region ; P region locally diffused into the gate region on a portion only of the depth of the latter and constituting an anode region (P2), the gate region and the anode region both appearing on the first surface of the chip and being covered respectively by the gate metallization (14) and the anode metallization (10) ; P region of low doping rate constituting a second central region (P1) on the other side of the central region ; N region locally diffused into the second central region of P type and constituting a cathode region (N2) covered by the cathode metallization (12) which is uniformly deposited on the major part of the second chip surface.</p> |
