发明名称 FORMING METHOD FOR PATTERN
摘要 PURPOSE:To completely prevent a coated silicide compound or oxide film or nitride film from separating by exposing the first layer organic surface with ozone atmosphere, and then coating the surface with the second layer silicide compound or oxide or nitride. CONSTITUTION:The first layer organic layer 2 is formed on an Si substrate 1. Then, an ozone generator is used to treat the surface of the layer 2. Then, a coated silicide compound layer 3 is formed. Thereafter, a resist pattern 4 is formed. Then, the pattern 4 is transferred to the layer 3 to form a pattern 3'. Thereafter, with the pattern 3' as a mask a pattern is transferred to the layer 2 to form a pattern 2'. A preferable pattern having no improper separation of the pattern 3' can be stably formed by the above step.
申请公布号 JPS60250628(A) 申请公布日期 1985.12.11
申请号 JP19840106391 申请日期 1984.05.28
申请人 HITACHI SEISAKUSHO KK;HITACHI MAIKURO COMPUTER ENGINEERING KK 发明人 TANAKA TOSHIHIKO;YANAGISAWA HIROSHI;HASEGAWA NOBUO;SUZUKI YOSHISHIGE
分类号 G03F7/26;G03F7/20;H01L21/027;H01L21/316 主分类号 G03F7/26
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