| 摘要 |
PURPOSE:To prevent a capacity from decreasing due to microminiaturization by providing a memory capacity, and the second conductor layer through a thick insulating film on the memory on the first semiconductor substrate as a switching transistor. CONSTITUTION:An electrode polysilicon 4 is superposed on a thin oxide film 2 separated by a thick oxide film 3 on an Si substrate 1 to form a capacity. Further, an Si layer is superposed by recrystallization of polysilicon on a thick insulator layer 5 to form a MOSFET 7. Drain and polysilicon 4 are filled in a through hole of the insulator 5, connected with the silicide 6 of high melting point metal, and bit wirings 8 for applying a signal to a source and aluminum word wiring 10 for applying a signal to the electrode 9 are provided. The electrode 9 and the word wirings are connected via the through hole, and the bit wirings 8, the wirings 10 and the gate electrode 9 are connected via the through hole, and the wirings 8, 10, and the electrode 9 are insulated by insulators 33, 34. In this memory device, similar function to the conventional memory of this type is obtained, and the area of the capacity can be increased. Accordingly, it can prevent the capacity from decreasing due to microminiaturization, thereby obtaining accurate memory device. |
