| 摘要 |
PURPOSE:To easily and economically manufacture GaPO4 which has excellent purity and is particularly suitable for electronics industry at a comparative low temperature by reaction between the aqueous solution of phosphoric acid and hydroxide or oxide of gallium within an organic solvent without consumption of heat energy. CONSTITUTION:Water is distillated together with solvent by reaction, under the cyclic flow, of the aqueous solution of phosphoric acid of 64wt% or less and hydroxide or oxide of gallium with the mol ratio P2O5/Ga2O3 in the range of 0.8-1.8 in the organic solvent such as cyclohexane, toluene, petroleum naphtha, and desirably those having the boiling point within the range of 60-200 deg.C and it is heated up to the boiling point of the solvent itself while the solvent corresponding to the distilled water and solvent are added. Thereafter, it is cooled, the produced crystal powder is filtered and it is then dried up. Thereby, high purity crystal orthophosphate gallium GaPO4 such as GaP, etc. for semiconductor element which is suited to electronics industry can be obtained easily with low cost using glass and stainless apparatus. |
