| 摘要 |
PURPOSE:To insulate and separate active semiconductor regions formed on an insulating substrate by emitting a light from the back surface of the substrate in reactive accumulation gas. CONSTITUTION:A single crystal Si 32 is epitaxially formed on a sapphire substrate 31, a resist mask 33 is formed, an RIE is performed, and an ultrafine groove 34 is formed. The mask is removed, secured to a sample base 13, and heated at 300 deg.C. Mixture gas of SiH4 and O2 is fed into a vaccum vessel 11 in this state, and a laser beam 17 is emitted from a light source 16 to the back surface of a sample. At this time, a beam 17 is reflected on the layer 32, and the beam 35 passed through the groove 34 decomposes the SiH4 to SiHx radical, reacted with O2 to accumulate only SiO2 36 in the groove 34. Since the SiO2 36 entirely transparent for ArF laser beam 35, the SiO2 36 is accumulated thickly as time goes, and eventually completely buries the groove 34. With this configuration, the active region can be insulated and separated in the simple steps, and charged beam does not damage the active region. |
