| 摘要 |
PURPOSE:To obtain semiconductor device having high reliability by using an electrode wiring structure superposed with a V layer on a W layer. CONSTITUTION:A diffused layer 2 and a field oxide film 3 are formed on an Si substrate 1, a window 7 is opened, and electrode wirings made of a V layer 4, a W layer 5, and a V layer 6 are attached. The wiring layer of this configuration is excellent at the points that the heat resistance and electric specific resistance are smaller than those of W or A single layer or the multilayer of W and Ti, and has electromigration resistance of the W wirings, and a semiconductor device having high reliability can be accordingly obtained. |
