发明名称 FIELD EFFECT ULTRAHIGH FREQUENCY TRANSISTOR DEVICE
摘要 PURPOSE:To reduce the ground wire inductance by a method wherein source bonding pads for ground are grounded by being arranged also on the side of a drain bonding pad. CONSTITUTION:As the construction of the surface wiring part of the titled device, source bonding pads 3a are arranged also on the side of the drain bonding pad 5, so that the grounding for the operating part 2 can be carried out with source bonding wires 5 via source bonding pads 3 and additionally with source bonding wires 6a via source bonding pads 3a. This manner can reduce the ground wire inductance to approx. 1/2 and improves the escape of heat evolving in the operating part; accordingly, the titled device of high reliability can be obtained also by reduction of thermal inductance.
申请公布号 JPS60249374(A) 申请公布日期 1985.12.10
申请号 JP19840106787 申请日期 1984.05.24
申请人 MITSUBISHI DENKI KK 发明人 SUGA JIROU
分类号 H01L29/812;H01L21/338;H01L21/60;H01L23/66 主分类号 H01L29/812
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